Cleavage luminescence from siliconHANEMAN, D; MCALPINE, N.Physical review letters. 1991, Vol 66, Num 6, pp 758-761, issn 0031-9007, 4 p.Article

Precision determination of long-wavelength cleavage luminescence energy and derivation of minimum surface state gap on clean cleaved Si surfacesLI, D. G; MCALPINE, N. S; HANEMAN, D et al.Surface science. 1993, Vol 289, Num 1-2, pp L609-L613, issn 0039-6028Article

Detection of temperature rise during cleavage of siliconZHAO, D; HANEMAN, D; MCALPINE, N. S et al.Surface science. 1996, Vol 369, Num 1-3, pp 76-84, issn 0039-6028Article

Surface barriers and potentials from luminescence on cleaved Si, GaAs, and InPLI, D. G; MCALPINE, N. S; HANEMAN, D et al.Surface science. 1993, Vol 281, Num 1-2, pp L315-L320, issn 0039-6028Article

Characterization of Ti-doped α-Fe₂O₃ electrodes by impedance measurementsMCALPINE, N. S; FREDLEIN, R. A.Journal of electroanalytical chemistry and interfacial electrochemistry. 1988, Vol 252, Num 1, pp 61-69, issn 0022-0728Article

Low temperature cleavage luminescence of siliconKAALUND, C. J; HANEMAN, D; MCALPINE, N. S et al.Surface science. 1995, Vol 337, Num 1-2, pp L795-L799, issn 0039-6028Article

Cleavage luminescence from InP, Ge and Ge_xSi_1-xLI, D. G; MCALPINE, N. S; HANEMAN, D et al.Surface science. 1994, Vol 303, Num 1-2, pp 171-178, issn 0039-6028Article

Progression of cleavage in Si, Ge, and GaAsLI, D. G; MCALPINE, N. S; HANEMAN, D et al.Applied surface science. 1993, Vol 65-66, pp 553-559, issn 0169-4332Conference Paper

Semiconductor bond rupture phenomena and surface propertiesHANEMAN, D; MCALPINE, N. S; BUSCH, E et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 484-490, issn 0169-4332Conference Paper

Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computerO'BRIEN, J. L; SCHOFIELD, S. R; SIMMONS, M. Y et al.SPIE proceedings series. 2001, pp 299-309, isbn 0-8194-4320-4Conference Paper